Pdf lightinduced metastability in pure and hydrogenated. Street divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. Band tails in hydrogenated amorphous silicon and silicon. H has been developed as an important materials in thin filmbased photovoltaic technologies because of considerable cost reduction as a result of low material consumption and lowtemperature process. This book describes the properties and device applications of hydrogenated amorphous silicon. Vacancies and voids in hydrogenated amorphous silicon a. As simple elemental tetrahedrally bonded amorphous semiconductors, they served as model systems in which the disorder was less complicated, being defined not by chemical composition but by the structural disorder only. Boron doping of hydrogenated amorphous silicon prepared by rfcosputtering article pdf available in brazilian journal of physics 322 june 2002 with 90. University of groningen firstprinciples study of hydrogenated. H, has been the subject of investigation for more than three deca des. Growth processes of hydrogenated amorphous silicon volume 609 john robertson. In all cases d h is thermally activated with an energy 1. These two processes are indicated by 1 a pl peak near 1.
H is a very attractive material for largearea thinfilm electronics, namely as thinfilm transistors for flat panel displays, as color sensors, or as the absorbing layer for solar cells. Colloidal particles of hydrogenated amorphous silicon asi. We have characterized hydrogenated amorphous silicon films prepared by rf diode sputtering in varying partial pressures of ne, ar, and kr. The relationship between the distribution of electronic.
Street, cambridge university press, cambridge 1991, xiv, 417 pp. Hydrogenated amorphous silicon cambridge university press. The effect of hydrogen on the growth, structure electronic properties c c tsai defects and defect dynamics. The essence of being human is that one does not seek perfection. An empirical analysis journal of applied physics 82, 3334 1997. Papaconstantopoulos metaphysics branch, navaresearch laboratory, 8ashington, d. Growth and characterization of hydrogenated amorphous. Hydrogenated amorphous silicon cambridge solid state science series street, r. A systematic series of hydrogenated amorphous silicon asi. High thermal conductivity of a hydrogenated amorphous silicon film. Street, technology and applications of amorphous silicon.
Zeman1 1dimes, delft university of technology, feldmannweg 17, 2600 gb delft, the netherlands 2electronic structure of materials, institute for molecules and materials, faculty of science, radboud university nijmegen, heyendaalseweg 5, 6525 aj nijmegen, the. Amorphous silicon asi is the non crystalline form of silicon used for. George orwell largearea, lowtemperature, monolithic deposition. Request pdf material properties of hydrogenated amorphous silicon.
This chapter introduces our research on amorphous silicon photonics. Silicon nanowire and nanocone arrays optical absorption. The diffusion coefficient decreases slowly with time which is attributed. At that time amorphous silicon and amorphous germanium, asi and age, were of. David cohen, 4 june 1990 silicon and silicongermanium shu jin. H has been measured over the temperature range 155300c, with particular emphasis on the effects of doping and compensation. The first section is concerned with the atomic and electronic structure.
It is shown that this correlation can be explained quantitatively by a spontaneous decay of the weakest bonding orbitals into nonbonding defects during deposition or annealing of a sample and that the same correlation. H waveguides with ultralowloss, vertical interlayer transition vit devices for cross coupling between vertically stacked optical circuits. Hydrogenated amorphous silicon thinfilm transistors asi. Hydrogenated amorphous silicon cambridge solid state science series. Boron doping of hydrogenated amorphous silicon prepared by rf. These inert gas effects are in contrast to those seen in inert gas dilution.
Cambridge core condensed matter physics, nanoscience and mesoscopic physics hydrogenated amorphous silicon by r. Street skip to main content accessibility help we use cookies to distinguish you from other users and to provide you with a better experience on our websites. The mechanisms of ion bombardment of growing film surface due to large negative floating potentials at low gas pressures can explain the observed film characteristics. Material properties of hydrogenated amorphous silicon request. Pdf boron doping of hydrogenated amorphous silicon. Amorphous silicon cells generally feature low efficiency, but are one of the most. The effect of 60 co radiation on the noise and drain. However, according to street 5, the diffusion coefficient of hydrogen in asi.
Hydrogenated amorphous silicon and related alloy films have attracted much attention because of the wide application of these films in devices such as thinfilm transistors and solar cells. Hydrogenated amorphous silicon cambridge solid state science series r. Wagner department of electrical engineering, princeton university, princeton, nj 08544 solar cells based on hydrogenated amorphous silicon are now made. Physical revie% 8 15 august 1983 theoretical study of optical absorption in hydrogenated amorphous silicon e. Characterization of amorphous silicon thin films and pv. Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. Hydrogenated amorphous silicon cambridge solid state. H, 2 to characterize the important defects and impurities in the bulk and at surfaces and interfaces, 3 to identify metastabilities and to determine if the metastabilities that plague devices are intrinsic or extrinsic, 4 to obtain a better understanding of how defects affect device performance. Optoelectronic properties of amorphous silicon the role of hydrogen. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. The correlation between the density of danglingbond defects and the slope of the urbach tail in hydrogenated amorphous silicon is examined. After the first report about the possibility of doping this material both in p and in ntype 1 the manufacturing of several electronic devices was successfully attempted.
On the formation of blisters in annealed hydrogenated asi. Street, hydrogenated amorphous silicon cambridge, new. Stress engineering in amorphous silicon thin films. Pdf hydrogenated amorphous silicon are a good way to achieve details about operating certainproducts. By exploring our highquality silicon thinfilm technology, we have demonstrated hydrogenated amorphous silicon asi. H is typically deposited by plasma decomposition of sih4, with other gases added for doping and alloying. Growth and characterization of hydrogenated amorphous silicon thin films martin k. Schematic structures of crystalline silicon, amorphous silicon, and amorphous hydrogenated silicon solar calculator with amorphous solar cell upper right corner and lcds. Amorphous silicon asi please note the most texts switch between asi. Hydrogenated amorphous silicon thinfilm transistor arrays. Theoretical study of optical absorption in hydrogenated. Hydrogenated amorphous silicon has enabled the active matrix liquid crystal. Amorphous silicon macroelectronics mit opencourseware.
High thermal conductivity of a hydrogenated amorphous. Among the materials used for thin film solar cells, amorphous silicon is the most important material in the commercial production. H to be doped by means of boron and phosphorus, has properties which are similar to that of crystalline semiconductors as photoconductive properties street, 1991. Hydrogenated amorphous silicon cambridge solid state science series street on. Amorphous films can result at t street xerox palo alto research center, palo alto, ca 94304 s. H is a suitable material for the realization of planar waveguides to route and modulate the optical signal. Hydrogenated amorphous silicon detectors for particle. Amorphous silicon an overview sciencedirect topics. Pdf studies of the photoelectrical and optical properties were done on hydrogenated amorphous silicon.
The main advantages of this material are the low deposition temperature that offers the use of glass and flexible substrates, the potential for tuning the energy bandgap 1. Growth processes of hydrogenated amorphous silicon mrs. Hydrogenated amorphous silicon is a disordered semiconductor whose optoelectronic properties are governed by the large number of defects present in its atomic structure. Pdf stress engineering in amorphous silicon thin films. Hydrogenated amorphous silicon thinfilm transistor arrays fabricated by digital lithography william s. Hydrogenated amorphous siliconbased thin film solar cell. Firstprinciples study of hydrogenated amorphous silicon k. H films has been deposited by the hot wire chemical. The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor. Pickett condensed matter physics branch, nuva research laboratory, 8ashington, d. H can be deposited by plasmaenhanced chemicalvapor deposition pecvd on almost any substrate at temperatures below 230 c, thus preserving compatibility with any microelectronic technology.
We measured the thermal conductivity of an 80 m thick hydrogenated amorphous silicon. Street abstract a jetprinted digitallithographic method, in place of conventional photolithography, was used to fabricate 64 64 pixel 300 m pitch matrix addressing thinfilm transistor. Lightinduced metastability in pure and hydrogenated amorphous silicon article pdf available in epl europhysics letters 1122. Optical properties of hydrogenated amorphous silicon with. Introduction amorphous silicon, and its more useful alloy form, hydrogenated amorphous silicon asi. H is a disordered semiconductor studied since the late 1960s.
At that time amorphous silicon and amorphous germanium, asi and age, were of more academic scientific interest. Amorphous silicon asi is the noncrystalline form of silicon used for solar cells and thinfilm transistors in lcds used as semiconductor material for asi solar cells, or thinfilm silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic. Emphasis is given to a detailed discussion of the various competing radiative and nonradiative recombination mechanisms. Growth related material properties of hydrogenated. Optoelectronic properties of amorphous silicon the role of. Taylor department of physics, university of utah salt lake city, ut 84112 usa received may 25, 1993 the two dominant photoluminescence pl processes in hydrogenated amorphous silicon asi. Amorphous silicon and related materials advances in. Vacancies and voids in hydrogenated amorphous silicon. Photoluminescence in hydrogenated amorphous silicon p. Mahan2 1department of physics, university of utah, salt lake city, ut 84112 2national renewable energy laboratory, golden, co 80401 abstract using 1h nuclear magnetic resonance nmr, the concentrations of molecular hydrogen have been. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material. Luminescence and recombination in hydrogenated amorphous. From experiment to modeling franco gaspari university of ontario institute of technology, canada 1. Abstract luminescence and related investigations of recombination in hydrogenated amorphous silicon prepared by glow discharge and sputtering are described.
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